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AlGaAs superlattice
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| · | Move the slider to d1=0: Now the many layer system is collapsed to a single layer and you see a simple 'sine-like' interference pattern.
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| · | Slowly increasing d1 you can watch the Bragg peak moving in from the right.
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| · | Around 60 nm thickness a second peak appears at 3 eV, also moving to the left with increasing d1.
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| · | Besides the large peaks there are, especially at the left side, narrow 'regular' interference patterns. These are due to interference of waves reflected at the top of the layer stack and at the bottom, i.e. they represent the total thickness of the layer stack.
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| · | Slowly increase x1 and watch how the dielectric function of material 1 responds. Note the shift of the fundamental gap from 1.3 eV (GaAs) to higher values. A large number of parameters (33) are used to model the complex interband transition structure of this material. All these parameters are controlled as slave parameters by the Al content as the only master parameter.
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| · | Approaching the value 0.9 of x2, the dielectric functions get closer and closer.
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| · | Now look at the reflectance spectrum. While x1 gets close to x2, the Bragg peaks disappear and only the interfence pattern of a single thick layer is seen.
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| · | If you are an experienced SCOUT user you can open the menu and the list of fit parameters. Create sliders for d2 and x2 and generate rather complex reflectance spectra by varying d1, x1, d2 and x2.
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